The influence of structural defects in ZnSe/GaAs heterostructures on luminescence propertiesLIU, Q; LAKNER, H; MENDORF, C et al.Journal of physics. D, Applied physics (Print). 1998, Vol 31, Num 19, pp 2421-2425, issn 0022-3727Article

Optically-pumped lasing of doped ZnSe epitaxial layers grown by metal-organic vapour-phase epitaxyYABLONSKII, G. P; GURSKII, A. L; LUTSENKO, E. V et al.Physica status solidi. A. Applied research. 1997, Vol 159, Num 2, pp 543-557, issn 0031-8965Article

Nitrogen doping of ZnSe with trimethylsilylazide, triallylamine or bisditrimethylsilylamidozinc during metalorganic vapour phase epitaxyTAUDT, W; LAMPE, S; SAUERLÄNDER, F et al.Journal of crystal growth. 1996, Vol 169, Num 2, pp 243-249, issn 0022-0248Article

Electron beam activation of acceptors in MOVPE ZnSe : NKOZLOVSKY, V. I; KRYSA, A. B; TAUDT, W et al.Journal of crystal growth. 1998, Vol 184-85, pp 435-439, issn 0022-0248Conference Paper

Optical and electrical properties of MOVPE-grown ZnSe:N using triallylamine as a nitrogen precursorGURSKII, A. L; TAUDT, W; LAMPE, S et al.Journal of crystal growth. 1997, Vol 170, Num 1-4, pp 533-536, issn 0022-0248Conference Paper

Low-temperature growth and nitrogen doping of ZnSe using diethylzinc and ditertiarybutylselenide in a plasma-stimulated low-pressure metalorganic vapour phase epitaxy systemTAUDT, W; WACHTENDORF, B; BECCARD, R et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 582-588, issn 0022-0248Conference Paper

Optimization of pre-epitaxial processes to obtain high-quality ZnSe/GaAs heterointerfaces grown in a low-pressure metalorganic vapour-phase epitaxy systemTAUDT, W; XU, J; HARDT, A et al.Journal of crystal growth. 1998, Vol 191, Num 4, pp 663-672, issn 0022-0248Article

Measurements of transient photocapacitance and photocurrent on MOVPE-grown Au/ZnSe/GaAs heterostructuresGERMAIN, M; EL YACOUBI, M; EVRARD, R et al.Journal of crystal growth. 1998, Vol 184-85, pp 199-202, issn 0022-0248Conference Paper

Temperature and excitation dependent photoluminescence of undoped and nitrogen-doped ZnSe epilayersGURSKII, A. L; GAVRILENKO, A. N; LUTSENKO, E. V et al.Physica status solidi. B. Basic research. 1996, Vol 193, Num 1, pp 257-267, issn 0370-1972Article

Metalorganic chemical vapor epitaxy and doping of ZnMgSSe heterostructures for blue emitting devicesHEUKEN, M; SÖLLNER, J; TAUDT, W et al.Journal of crystal growth. 1997, Vol 170, Num 1-4, pp 30-38, issn 0022-0248Conference Paper

Influence of compensation on the luminescence of nitrogen-doped ZnSe epilayers grown by MOVPEHEITZ, R; MOLL, E; HEUKEN, M et al.Journal of crystal growth. 1996, Vol 159, Num 1-4, pp 307-311, issn 0022-0248Conference Paper

Oxygen and tellurium impurities in zinc selenide grown by metalorganic vapour phase epitaxyGURSKII, A. L; VAKARELSKA, K; TAUDT, W et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 592-598, issn 0022-0248Conference Paper

Incorporation of nitrogen in ZnSe grown by metalorganic vapour phase epitaxyHOFFMANN, A; HEITZ, R; LUMMER, B et al.Journal of crystal growth. 1994, Vol 138, Num 1-4, pp 379-384, issn 0022-0248Conference Paper

Low temperature growth and plasma enhanced nitrogen doping of ZnSe by metalorganic vapour phase epitaxyTAUDT, W; SCHNEIDER, A; HEUKEN, M et al.Journal of crystal growth. 1994, Vol 138, Num 1-4, pp 418-424, issn 0022-0248Conference Paper